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| TO-220 Plastic Package TIP29, TIP29A, TIP29B, TIP29C TIP30, TIP30A, TIP30B, TIP30C Boca Semiconductor Corp. TIP29, 29A, 29B, 29C TIP30, 30A, 30B, 30C General Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR BSC NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O M IN. 14.42 9.63 3.56 M A X. N L O 123 D G J M 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DE G 7 A O ABSOLUTE MAXIMUM RATINGS 29 30 max. 40 max. 40 max. max. max. max. min. max. 29 30 max. 40 max. 40 29A 29B 30A 30B 60 80 60 80 1.0 30 150 0.7 15 75 29A 29B 29C 30A 30B 30C 60 80 100 60 80 100 29C 30C 100 100 Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 1 A; IB = 125 mA D.C. current gain IC = 1 A; VCE = 4 V VCBO VCEO IC Ptot Tj VCEsat hFE All dim insions in m m . K V V A W C V RATINGS (at TA=25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) VCBO VCEO V V http://www.bocasemi.com page: 1 TIP29, TIP29A, TIP29B, TIP29C TIP30, TIP30A, TIP30B, TIP30C Emitter-base voltage (open collector) Collector current Collector current (Peak) Base current Total power dissipation upto TC=25C Derate above 25C Total power dissipation upto T A=25C Derate above 25C Junction temperature Storage temperature THERMAL RESISTANCE From junction to ambient From junction to case CHARACTERISTICS Tamb = 25C unless otherwise specified Collector cutoff current IB = 0; VCE = 30V IB = 0; VCE = 60V VEB = 0; VCE = V CEO Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 30 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 1 A; IB = 125 mA Base emitter on voltage IC = 1 A; VCE = 4 V D.C. current gain IC = 0.2 A; VCE = 4 V IC = 1 A; VCE = 4 V Small-signal current gain IC = 0.2A; VCE = 10V; f = 1 KHz Transition frequency IC = 0.2A; VCE = 10V; f = 1 MHz VEBO IC ICM IB Ptot Ptot Tj T stg Rth j-a Rth j-c max. max. max. max. max. max. max. max. max. 5.0 1.0 3.0 0.4 30 0.24 2 0.016 150 -65 to +150 62.5 4.167 V A A A W W /C W W /C C C C W / C W / 29 30 ICEO ICEO ICES IEBO max. 0.3 max. - max. max. 29A 29B 29C 30A 30B 30C 0.3 - - 0.3 0.2 1.0 60 60 5.0 0.7 1.3 40 15 75 20 3 MHz 80 80 100 100 - 0.3 mA mA mA mA V V V V V VCEO(sus)* min. 40 VCBO min. 40 VEBO min. VCEsat* VBE(on)* hFE* hFE* hfe fT (2) max. max. min. min. max. min. min. * Pulse test: pulse width 300 s; duty cycle 2%. (2) fT = |hfe |* ftest . http://www.bocasemi.com page: 2 |
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